PART |
Description |
Maker |
MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET High Energy Power FET TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
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MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培,功率场效应晶体000伏特的RDS(on)\u003d 0.80欧姆 TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA From old datasheet system TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 600 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTP12P10 MTP12P10_D ON2547 |
From old datasheet system TMOS POWER FET 12 AMPERES 60 VOLTS TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM
|
MOTOROLA[Motorola, Inc] ON Semi
|
MTP60N06 MTP60N06HD MTP60N06HD_D ON2633 |
From old datasheet system TMOS POWER FET 60 AMPERES 50 VOLTS TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM
|
MOTOROLA[Motorola, Inc] ON Semi
|
MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
|
ON Semiconductor MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] Motorola, Inc.
|
MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTV32N20E MTV32N20E_D ON2673 MTV32N20E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate TMOS POWER FET 32 AMPERES 200 VOLTS RDS(ON) = 0.075 OHM From old datasheet system
|
ON Semiconductor ETC Motorola, Inc
|
MTB36N06E |
TMOS POWER FET 36 AMPERES 60 VOLTS
|
MOTOROLA[Motorola, Inc]
|
MTB75N05HD |
TMOS POWER FET 75 AMPERES 50 VOLTS
|
Motorola, Inc.
|